2004. 05. 21 1/2 semiconductor technical data PZTA92 epitaxial planar pnp transistor revision no : 0 high voltage application. telephone application. features complementary to pzta42. maximum rating (ta=25 ) + _ 6.5 0.2 + _ + _ + _ a 1 123 3 2 sot-223 l k g j h d f e b c 0.26+0.09/-0.02 10 max 0.1 max 1.75 0.25 3.0+0.15/-0.1 2.3 typ 7 0.3 0.7+0.15/-0.1 1.8 max 3.5 0.2 dim millimeters h e b j f f g k l c d a 1. base 2. collector (heat sink) 3. emitter electrical characteristics (ta=25 ) *pulse test : pulse width 300 s, duty cycle 2.0% * package mounted on fr-4 pcb 36 18 1.5mm. : mountina pad for the collector lead min.6cm 2 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -300 - - v collector-emitter breakdown voltage v (be)ceo i c =-1.0ma, i b =0 -300 - - v dc current gain * h fe i c =-1.0ma, v ce =-10v 25 - - i c =-10ma, v ce =-10v 40 - - i c =-30ma, v ce =-10v 25 - - collector-emitter saturation voltage v ce(sat) i c =-20ma, i b =-2.0ma - - -0.5 v base-emitter saturation voltage v be(sat) i c =-20ma, i b =-2.0ma - - -0.9 v transition frequency f t v ce =-20v, i c =-10ma, f=100mhz 50 - - mhz collector output capacitance c ob v cb =-20v, i e =0, f=1mhz - - 6.0 pf characteristic symbol rating unit collector-base voltage v cbo -300 v collector-emitter voltage v ceo -300 v emitter-base voltage v ebo -5.0 v collector current i c -500 ma emitter current i e 500 ma collector power dissipation p c * 1 w junction temperature t j 150 storage temperature t stg -55 150 type name marking lot no. PZTA92
2004. 05. 21 2/2 PZTA92 revision no : 0
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